STM observation of rapidly cooled Si(111) vicinal surfaces

F. Katsuki; K. Kamei

doi:10.1016/0169-4332(95)00414-9

STM observation of rapidly cooled Si(111) vicinal surfaces

F. Katsuki^*, K. Kamei

^*この研究の対応する著者

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

本文言語	English
ページ（範囲）	485-492
ページ数	8
ジャーナル	Applied Surface Science
巻	94-95
DOI	https://doi.org/10.1016/0169-4332(95)00414-9
出版ステータス	Published - 1996 3月
外部発表	はい

ASJC Scopus subject areas

物理化学および理論化学
表面、皮膜および薄膜
凝縮系物理学

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10.1016/0169-4332(95)00414-9

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@article{d6ab87df5a4e40b8893ac4d228ef8d57,

title = "STM observation of rapidly cooled Si(111) vicinal surfaces",

abstract = "The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [12{\=3}] and [{\=1}{\=2}3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.",

author = "F. Katsuki and K. Kamei",

year = "1996",

month = mar,

doi = "10.1016/0169-4332(95)00414-9",

language = "English",

volume = "94-95",

pages = "485--492",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - STM observation of rapidly cooled Si(111) vicinal surfaces

AU - Katsuki, F.

AU - Kamei, K.

PY - 1996/3

Y1 - 1996/3

N2 - The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

AB - The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

UR - http://www.scopus.com/inward/record.url?scp=16144369444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=16144369444&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(95)00414-9

DO - 10.1016/0169-4332(95)00414-9

M3 - Article

AN - SCOPUS:16144369444

SN - 0169-4332

VL - 94-95

SP - 485

EP - 492

JO - Applied Surface Science

JF - Applied Surface Science

ER -

STM observation of rapidly cooled Si(111) vicinal surfaces

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