抄録
We have fabricated nanometer-size pyramids (nanopyramids) on blunt W tips to apply for bright field emitter. The blunt tips were preliminarily given remolding treatment in order to sharpen their ends. The nanopyramids were grown on the tip end by being covered with thin layers of Pd and subsequently annealed at 1000 K. The structures of the specimen were analyzed by using filed ion microscopy (FIM). As a result, we have clarified detailed information about the atomic structures, of which the acquisition was not allowed in case that only FEM was employed. As far as the remolded W tips were concerned, the tip-end dimension of about 3 nm was narrowest possible for all the combinations of the remolding temperature and electric field. On the other hand, the grown nanopyramid with {211} sides and monoatomic-chain ridges exhibited even narrower summit. These findings are consistent with the contrasting behaviors of current stability data previously clarified by the FEM study.
本文言語 | English |
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ホスト出版物のタイトル | Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference |
ページ | 51-52 |
ページ数 | 2 |
出版ステータス | Published - 2011 |
イベント | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal 継続期間: 2011 7月 18 → 2011 7月 22 |
Other
Other | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 |
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City | Wuppertal |
Period | 11/7/18 → 11/7/22 |
ASJC Scopus subject areas
- 電子工学および電気工学