Structural analysis of nanometer-size pyramid grown on an end of tungsten blunt tip

Tatsuhiro Nakagawa*, E. Rokuta, G. Hashimoto, H. Murata, H. Shimoyama, C. Oshima

*この研究の対応する著者

研究成果: Conference contribution

抄録

We have fabricated nanometer-size pyramids (nanopyramids) on blunt W tips to apply for bright field emitter. The blunt tips were preliminarily given remolding treatment in order to sharpen their ends. The nanopyramids were grown on the tip end by being covered with thin layers of Pd and subsequently annealed at 1000 K. The structures of the specimen were analyzed by using filed ion microscopy (FIM). As a result, we have clarified detailed information about the atomic structures, of which the acquisition was not allowed in case that only FEM was employed. As far as the remolded W tips were concerned, the tip-end dimension of about 3 nm was narrowest possible for all the combinations of the remolding temperature and electric field. On the other hand, the grown nanopyramid with {211} sides and monoatomic-chain ridges exhibited even narrower summit. These findings are consistent with the contrasting behaviors of current stability data previously clarified by the FEM study.

本文言語English
ホスト出版物のタイトルProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference
ページ51-52
ページ数2
出版ステータスPublished - 2011
イベント2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal
継続期間: 2011 7月 182011 7月 22

Other

Other2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
CityWuppertal
Period11/7/1811/7/22

ASJC Scopus subject areas

  • 電子工学および電気工学

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