Structural and electrical properties of beryllium implanted silicon carbide

T. Henkel; Y. Tanaka; Naoto Kobayashi; H. Tangue; M. Gong; X. D. Chen; S. Fung; C. D. Beling

Structural and electrical properties of beryllium implanted silicon carbide

T. Henkel^*, Y. Tanaka, Naoto Kobayashi, H. Tangue, M. Gong, X. D. Chen, S. Fung, C. D. Beling

^*この研究の対応する著者

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

本文言語	English
ホスト出版物のタイトル	Materials Research Society Symposium - Proceedings
出版社	Materials Research Society
ページ	117-122
ページ数	6
巻	572
出版ステータス	Published - 1999
外部発表	はい
イベント	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA 継続期間: 1999 4月 5 → 1999 4月 8

Other

Other	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'
City	San Francisco, CA, USA
Period	99/4/5 → 99/4/8

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料

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引用スタイル

Henkel, T, Tanaka, Y, Kobayashi, N, Tangue, H, Gong, M, Chen, XD, Fung, S & Beling, CD 1999, Structural and electrical properties of beryllium implanted silicon carbide. in Materials Research Society Symposium - Proceedings. vol. 572, Materials Research Society, pp. 117-122, Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications', San Francisco, CA, USA, 99/4/5.

@inproceedings{29b3f64275bf4d5f8090494c671ac3c0,

title = "Structural and electrical properties of beryllium implanted silicon carbide",

abstract = "Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.",

author = "T. Henkel and Y. Tanaka and Naoto Kobayashi and H. Tangue and M. Gong and Chen, {X. D.} and S. Fung and Beling, {C. D.}",

year = "1999",

language = "English",

volume = "572",

pages = "117--122",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - GEN

T1 - Structural and electrical properties of beryllium implanted silicon carbide

AU - Henkel, T.

AU - Tanaka, Y.

AU - Kobayashi, Naoto

AU - Tangue, H.

AU - Gong, M.

AU - Chen, X. D.

AU - Fung, S.

AU - Beling, C. D.

PY - 1999

Y1 - 1999

N2 - Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

AB - Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0033322576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033322576&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033322576

VL - 572

SP - 117

EP - 122

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

Structural and electrical properties of beryllium implanted silicon carbide

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