Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

S. Shimoto; M. Fujimaki; N. Miyazaki; Y. Nishihara; Y. Ohki; K. Imamura; K. Terasawa

Structural changes in Ge-doped SiO₂ planar waveguides induced by ultraviolet photons

S. Shimoto^*, M. Fujimaki, N. Miyazaki, Y. Nishihara, Y. Ohki, K. Imamura, K. Terasawa

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

抄録

The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO₂ waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

本文言語	English
ページ	47-50
ページ数	4
出版ステータス	Published - 1998 12月 1
イベント	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9月 27 → 1998 9月 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

他のファイルとリンク

引用スタイル

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title = "Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons",

abstract = "The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.",

author = "S. Shimoto and M. Fujimaki and N. Miyazaki and Y. Nishihara and Y. Ohki and K. Imamura and K. Terasawa",

year = "1998",

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day = "1",

language = "English",

pages = "47--50",

note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

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T1 - Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

AU - Shimoto, S.

AU - Fujimaki, M.

AU - Miyazaki, N.

AU - Nishihara, Y.

AU - Ohki, Y.

AU - Imamura, K.

AU - Terasawa, K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

AB - The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

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T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -