Structural characterization of ion-beam-induced epitaxially crystallized thin layers of III-V and IV-IV semiconductors

Engineering & Materials Science

• Ion beams 100%
• Crystallization 76%
• Semiconductor materials 62%
• Ion bombardment 48%
• Ions 27%
• Heavy ions 14%
• Epitaxial growth 14%
• Structural properties 10%
• Crystalline materials 10%
• Nuclear energy 10%
• X rays 9%
• Temperature 4%

Physics & Astronomy

• ion beams 54%
• crystallization 54%
• characterization 39%
• bombardment 37%
• ions 23%
• dosage 13%
• accommodation 11%
• nuclear energy 10%
• solid phases 9%
• implantation 8%
• heavy ions 8%
• curves 5%
• x rays 4%
• temperature 2%

Chemical Compounds

• Semiconductor 53%
• Crystallization 49%
• Ion Bombardment 39%
• Nuclear Energy 15%
• Heavy Ion 14%
• Amorphous Material 13%
• Ion 11%
• Dose 7%
• Strain 7%
• X-Ray 6%
• Surface 3%