@article{6b9311243cb946d1835c51d912b9a5b0,
title = "Structural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy",
abstract = "We have investigated the structure of Co2MnSi/MgO/Co2MnSi magnetic tunneling junctions with different tunnel magnetoresistance values depending on the in situ annealing temperatures just after the deposition of the upper Co2MnSi electrodes. The nano-beam diffraction patterns indicated that the degree of order of the upper Co2MnSi electrode annealed at 550 °C was higher than that of an electrode annealed at 400 °C. Moreover, the degree of the L21 order of the upper Co2MnSi electrode annealed at 550 °C was even lower than that of the lower Co2MnSi electrode annealed at an almost equal temperature of 600 °C. Atomic-scale observation using a high-angle annular dark-field (HAADF) method distinctly showed the existence of the L21-ordered regions in the B2-ordered matrix in the upper Co2MnSi electrode annealed at 400 °C.",
keywords = "CoMnSi, HAADF-STEM, Magnetic tunnel junction, Transmission electron microscopy",
author = "Nakatani, {T. M.} and Takahashi, {Y. K.} and T. Ishikawa and M. Yamamoto and K. Hono",
note = "Funding Information: The authors are grateful to FEI Company Japan Ltd. for their cooperation in the HAADF-STEM observations. This work was partly supported by Grants-in-Aid for Scientific Research on Priority Area “Creation and Control of Spin Current” (Grant nos. 19048001 and 19048029), a Grant-in-Aid for Scientific Research (A) (Grant no. 20246054), and the World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, from the MEXT, Japan. One of the authors (T.M.N.) acknowledges the National Institute for Materials Science (NIMS) for the NIMS junior researcher assistantship.",
year = "2010",
month = feb,
doi = "10.1016/j.jmmm.2009.09.059",
language = "English",
volume = "322",
pages = "357--361",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "3",
}