Structural defects in amorphous silicon oxynitride and silicon nitride

H. Kato*, Y. Ohki

*この研究の対応する著者

研究成果: Review article査読

1 被引用数 (Scopus)

抄録

Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.

本文言語English
ページ(範囲)39-49
ページ数11
ジャーナルDefect and Diffusion Forum
218-220
DOI
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • 放射線
  • 材料科学一般
  • 凝縮系物理学

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