TY - JOUR
T1 - Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane
AU - Noma, Takashi
AU - Sugiura, Takaharu
AU - Ishii, Keisuke
AU - Ohki, Yoshimichi
AU - Hama, Yoshimasa
PY - 1997/3/21
Y1 - 1997/3/21
N2 - Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.
AB - Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.
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U2 - 10.1088/0022-3727/30/6/005
DO - 10.1088/0022-3727/30/6/005
M3 - Article
AN - SCOPUS:0000114533
SN - 0022-3727
VL - 30
SP - 937
EP - 943
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 6
ER -