Structural study of ptsi/(111)si interface with high-resolution electron microscopy

Hiroshi Kawarada*, Iwao Ohdomari, Shigeo Horiuchi

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The interface structure between PtSi and (111)Si has been clarified on an atomic scale for the first time, using a 1 mv high-resolution electron microscope. At the interface the transition from the PtSi lattice to the Si lattice is abrupt without the formation of any extra phase. Lattice fringe images show that the interface is heavily undulated and has atomic steps. Large lattice mismatch between PtSi and Si generates these atomic steps and extra half planes of PtSi. The observed relationship between the slope of the interface and the number of extra half planes can be explained by a simple model.

本文言語English
ページ(範囲)L799-L802
ジャーナルJapanese journal of applied physics
23
10
DOI
出版ステータスPublished - 1984 10月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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