Study of energy band parameters in p‐type Ge0.9Si0.1 alloys

K. Takeda; Y. Maeda; E. Ohta; M. Sakata; G. Kido; N. Miura

doi:10.1002/pssb.2221150206

Study of energy band parameters in p‐type Ge_0.9Si_0.1 alloys

K. Takeda^*, Y. Maeda, E. Ohta, M. Sakata, G. Kido, N. Miura

^*この研究の対応する著者

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

The electronic properties of Ge_0.9Si_0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

本文言語	English
ページ（範囲）	369-379
ページ数	11
ジャーナル	physica status solidi (b)
巻	115
号	2
DOI	https://doi.org/10.1002/pssb.2221150206
出版ステータス	Published - 1983 2月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

文献へのアクセス

10.1002/pssb.2221150206

他のファイルとリンク

引用スタイル

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AU - Ohta, E.

AU - Sakata, M.

AU - Kido, G.

AU - Miura, N.

PY - 1983/2/1

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AB - The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

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