Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

Hisayo Sasaki Momose; Hideki Kimijima; Shin ichiro Ishizuka; Yasunori Miyahara; Tatsuya Ohguro; Takashi Yoshitomi; Eiji Morifuji; Shin ichi Nakamura; Toyota Morimoto; Yasuhiro Katsumata; Hiroshi Iwai

Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

Hisayo Sasaki Momose^*, Hideki Kimijima, Shin ichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Shin ichi Nakamura, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

^*この研究の対応する著者

研究成果: Conference article › 査読

25 被引用数 (Scopus)

抄録

Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.

本文言語	English
ページ（範囲）	923-926
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 1998
外部発表	はい
イベント	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1998 12月 6 → 1998 12月 9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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引用スタイル

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title = "Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime",

abstract = "Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.",

author = "Momose, {Hisayo Sasaki} and Hideki Kimijima and Ishizuka, {Shin ichiro} and Yasunori Miyahara and Tatsuya Ohguro and Takashi Yoshitomi and Eiji Morifuji and Nakamura, {Shin ichi} and Toyota Morimoto and Yasuhiro Katsumata and Hiroshi Iwai",

year = "1998",

language = "English",

pages = "923--926",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

AU - Momose, Hisayo Sasaki

AU - Kimijima, Hideki

AU - Ishizuka, Shin ichiro

AU - Miyahara, Yasunori

AU - Ohguro, Tatsuya

AU - Yoshitomi, Takashi

AU - Morifuji, Eiji

AU - Nakamura, Shin ichi

AU - Morimoto, Toyota

AU - Katsumata, Yasuhiro

AU - Iwai, Hiroshi

PY - 1998

Y1 - 1998

N2 - Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.

AB - Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032256946&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032256946

SN - 0163-1918

SP - 923

EP - 926

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

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