Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1998|
|イベント||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
継続期間: 1998 12月 6 → 1998 12月 9
ASJC Scopus subject areas