Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

Hisayo Sasaki Momose^*, Hideki Kimijima, Shin ichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Shin ichi Nakamura, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai