Study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation

Takashi Yoshitomi, Hideki Kimijima, Shinnichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Eiji Morifuji, Toyota Morimoto, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai