Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy

Sathiabama Thiru; Masaki Asakawa; Kazuki Honda; Atsushi Kawaharazuka; Atsushi Tackeuchi; Toshiki Makimoto; Yoshiji Horikoshi

doi:10.1016/j.jcrysgro.2015.02.059

Study of single crystal CuInSe₂ thin films and CuGaSe₂/CuInSe₂ single quantum well grown by molecular beam epitaxy

Sathiabama Thiru^*, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

High quality CuGaSe₂ and CuInSe₂ single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe₂ is grown on CuInSe₂ at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe₂/CuInSe₂. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe₂/CuInSe₂ single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

本文言語	English
ページ（範囲）	203-206
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	425
DOI	https://doi.org/10.1016/j.jcrysgro.2015.02.059
出版ステータス	Published - 2015 7月 28

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

文献へのアクセス

10.1016/j.jcrysgro.2015.02.059

他のファイルとリンク

引用スタイル

@article{e967d05ec4804dcfa89dc747a7b05b27,

title = "Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy",

abstract = "High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.",

keywords = "A1. RHEED, A1. XRD, A3. CGS/CIS single quantum well, A3. MEE, B3. Solar cell, PL, Thin-film chalcopyrite",

author = "Sathiabama Thiru and Masaki Asakawa and Kazuki Honda and Atsushi Kawaharazuka and Atsushi Tackeuchi and Toshiki Makimoto and Yoshiji Horikoshi",

note = "Funding Information: This work is partly supported by Grants-in-Aid for Scientific Research B ( 23360163 ) and Young Scientists B ( 20760203 and 22760233 ) from the Japan Society for the Promotion of Science (JSPS) . The authors are most grateful to Tomotaka Satou, Kouki Toyoda and Ryuki Taniguchi of Waseda University. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.All rights reserved.",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.059",

language = "English",

volume = "425",

pages = "203--206",

journal = "Journal of Crystal Growth",

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AU - Thiru, Sathiabama

AU - Asakawa, Masaki

AU - Honda, Kazuki

AU - Kawaharazuka, Atsushi

AU - Tackeuchi, Atsushi

AU - Makimoto, Toshiki

AU - Horikoshi, Yoshiji

N1 - Funding Information: This work is partly supported by Grants-in-Aid for Scientific Research B ( 23360163 ) and Young Scientists B ( 20760203 and 22760233 ) from the Japan Society for the Promotion of Science (JSPS) . The authors are most grateful to Tomotaka Satou, Kouki Toyoda and Ryuki Taniguchi of Waseda University. Publisher Copyright: © 2015 Elsevier B.V.All rights reserved.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

AB - High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

KW - A1. RHEED

KW - A1. XRD

KW - A3. CGS/CIS single quantum well

KW - A3. MEE

KW - B3. Solar cell

KW - PL

KW - Thin-film chalcopyrite

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