TY - GEN
T1 - Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding
AU - Yamada, Kosuke
AU - Kuwae, Hiroyuki
AU - Kamibayashi, Takumi
AU - Shoji, Shuichi
AU - Momose, Wataru
AU - Mizuno, Jun
N1 - Funding Information:
This work is partly supported by Japan Ministry of Education, Culture, Sport Science & Technology (MEXT) Grant-in-Aid for Scientific Basic Research (A) No. 16H02349 and Young Scientists No. 18K13770. The authors thank for MEXT Nanotechnology Platform Support Project of Waseda University.
Publisher Copyright:
© 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2019/5
Y1 - 2019/5
N2 - Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.
AB - Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.
UR - http://www.scopus.com/inward/record.url?scp=85068364034&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068364034&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735244
DO - 10.23919/LTB-3D.2019.8735244
M3 - Conference contribution
AN - SCOPUS:85068364034
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
SP - 41
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -