Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi*, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio


研究成果: Conference contribution


Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

ホスト出版物のタイトルUltrafast Phenomena in Semiconductors and Nanostructure Materials X
出版ステータスPublished - 2006 5月 23
イベントUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States
継続期間: 2006 1月 232006 1月 25


名前Proceedings of SPIE - The International Society for Optical Engineering


ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials X
国/地域United States
CitySan Jose, CA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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