Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi; Takamasa Kuroda; Hirotaka Otake; Kazuyoshi Taniguchi; Takako Chinone; Ji Hao Liang; Masataka Kajikawa; Naochika Horio

doi:10.1117/12.640263

Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi^*, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

^*この研究の対応する著者

先進理工学部

研究成果: Conference contribution

抄録

Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T^1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

本文言語	English
ホスト出版物のタイトル	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
DOI	https://doi.org/10.1117/12.640263
出版ステータス	Published - 2006 5月 23
イベント	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States 継続期間: 2006 1月 23 → 2006 1月 25

出版物シリーズ

名前	Proceedings of SPIE - The International Society for Optical Engineering
巻	6118
ISSN（印刷版）	0277-786X

Conference

Conference	Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
国/地域	United States
City	San Jose, CA
Period	06/1/23 → 06/1/25

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
コンピュータサイエンスの応用
応用数学
電子工学および電気工学

文献へのアクセス

10.1117/12.640263

他のファイルとリンク

引用スタイル

Tackeuchi, A, Kuroda, T, Otake, H, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2006, Sub-picosecond exciton spin-relaxation in GaN. in Ultrafast Phenomena in Semiconductors and Nanostructure Materials X., 611803, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, San Jose, CA, United States, 06/1/23. https://doi.org/10.1117/12.640263

@inproceedings{f56650361db444fba7950a1b538afda7,

title = "Sub-picosecond exciton spin-relaxation in GaN",

abstract = "Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.",

author = "Atsushi Tackeuchi and Takamasa Kuroda and Hirotaka Otake and Kazuyoshi Taniguchi and Takako Chinone and Liang, {Ji Hao} and Masataka Kajikawa and Naochika Horio",

year = "2006",

month = may,

day = "23",

doi = "10.1117/12.640263",

language = "English",

isbn = "0819461601",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X",

note = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X ; Conference date: 23-01-2006 Through 25-01-2006",

}

TY - GEN

T1 - Sub-picosecond exciton spin-relaxation in GaN

AU - Tackeuchi, Atsushi

AU - Kuroda, Takamasa

AU - Otake, Hirotaka

AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Liang, Ji Hao

AU - Kajikawa, Masataka

AU - Horio, Naochika

PY - 2006/5/23

Y1 - 2006/5/23

N2 - Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

AB - Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

UR - http://www.scopus.com/inward/record.url?scp=33646712167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646712167&partnerID=8YFLogxK

U2 - 10.1117/12.640263

DO - 10.1117/12.640263

M3 - Conference contribution

AN - SCOPUS:33646712167

SN - 0819461601

SN - 9780819461605

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

T2 - Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

Y2 - 23 January 2006 through 25 January 2006

ER -

Sub-picosecond exciton spin-relaxation in GaN

抄録

出版物シリーズ

Conference

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル