TY - GEN
T1 - Sub-picosecond Spin relaxation in GaN
AU - Kuroda, T.
AU - Yabushita, T.
AU - Kosuge, T.
AU - Tackeuchi, A.
AU - Taniguchi, K.
AU - Chinone, T.
AU - Horio, N.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.
AB - The spin relaxation process of A-band exciton in GaN is observed for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are measured to be 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τs, is found to be proportional to T -1.4, where T is the temperature.
UR - http://www.scopus.com/inward/record.url?scp=33749521404&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749521404&partnerID=8YFLogxK
U2 - 10.1063/1.1994109
DO - 10.1063/1.1994109
M3 - Conference contribution
AN - SCOPUS:33749521404
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 299
EP - 300
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -