Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

G. Kido; S. Yamada; T. Makimoto

doi:10.1016/0921-4526(92)90144-H

Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

G. Kido^*, S. Yamada, T. Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

本文言語	English
ページ（範囲）	433-436
ページ数	4
ジャーナル	Physica B: Physics of Condensed Matter
巻	177
号	1-4
DOI	https://doi.org/10.1016/0921-4526(92)90144-H
出版ステータス	Published - 1992 3月 2
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

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10.1016/0921-4526(92)90144-H

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title = "Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs",

abstract = "Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.",

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AU - Kido, G.

AU - Yamada, S.

AU - Makimoto, T.

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N2 - Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

AB - Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

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U2 - 10.1016/0921-4526(92)90144-H

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JO - Physica B: Condensed Matter

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Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

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