SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato; H. Morimoto; K. Tsukamoto; H. Shinohara; M. Inuishi

SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato^*, H. Morimoto, K. Tsukamoto, H. Shinohara, M. Inuishi

^*この研究の対応する著者

研究成果: Conference contribution

抄録

Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

本文言語	English
ホスト出版物のタイトル	Digest of Technical Papers - Symposium on VLSI Technology
出版社	Business Cent for Academic Soc Japan
ページ	72-73
ページ数	2
ISBN（印刷版）	4930813093
出版ステータス	Published - 1985 12月 1
外部発表	はい

出版物シリーズ

名前	Digest of Technical Papers - Symposium on VLSI Technology
ISSN（印刷版）	0743-1562

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

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AU - Shinohara, H.

AU - Inuishi, M.

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SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

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出版物シリーズ

ASJC Scopus subject areas

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