Substitution and electrical activation of carbon in 12C+- and 12C++31P+-implanted InP were studied for various annealing stages (773-923 K for 20 min). 12C+ was implanted into semi-insulating InP at a range of ∼3.0 μm with a total dose of 3 × 1014 cm-2. The co-implantation of 12C+ and 31P+ was performed at a range of ∼2.0 μm with an individual dose of 3 × 1014 cm-2. Rutherford back scattering, X-ray diffraction and Raman spectroscopy measurements showed the improvement of the crystallinity in the InP matrix by the annealing, indicating the disappearance of the introduced vacancy-interstitial pairs. Those were introduced during ion irradiation. All the annealed samples showed the n-type conduction by a van der Pauw method. The electric activation rate in the 12C+ implanted samples reached to 4.5% for those annealed at 923 K. For the co-implanted samples, the rate was slightly improved (∼7.3%). Nuclear reaction analyses for the 12C+-implanted samples using a 12C(d,p)13C reaction showed a tendency that carbon is easily incorporated into the interstitial lattice sites.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 2002 5月|
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