TY - GEN
T1 - Successful demonstration of low-voltage (1 Vpp) MZI-Type EAM-integrated DFB laser for 25.8-Gbit/s 40-km transmission
AU - Ueda, Y.
AU - Fujisawa, T.
AU - Kanazawa, S.
AU - Kobayashi, W.
AU - Takahata, K.
AU - Sanjoh, H.
AU - Ishii, H.
PY - 2014/12/16
Y1 - 2014/12/16
N2 - We developed a new type of EAM-integrated DFB laser that employs both optical absorption and interferometric extinction. And, we achieve a 25.8-Gbit/s 40Gbit/s 40-km transmission with the km novel laser at a modulation voltage of 1 Vpp.
AB - We developed a new type of EAM-integrated DFB laser that employs both optical absorption and interferometric extinction. And, we achieve a 25.8-Gbit/s 40Gbit/s 40-km transmission with the km novel laser at a modulation voltage of 1 Vpp.
UR - http://www.scopus.com/inward/record.url?scp=84920118220&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920118220&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2014.159
DO - 10.1109/ISLC.2014.159
M3 - Conference contribution
AN - SCOPUS:84920118220
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 52
EP - 53
BT - Conference Digest - IEEE International Semiconductor Laser Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Y2 - 7 September 2014 through 10 September 2014
ER -