Superconducting properties of homoepitaxial CVD diamond

Y. Takano; T. Takenouchi; S. Ishii; S. Ueda; T. Okutsu; I. Sakaguchi; H. Umezawa; H. Kawarada; M. Tachiki

doi:10.1016/j.diamond.2007.01.027

Superconducting properties of homoepitaxial CVD diamond

Y. Takano^*, T. Takenouchi, S. Ishii, S. Ueda, T. Okutsu, I. Sakaguchi, H. Umezawa, H. Kawarada, M. Tachiki

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

98 被引用数 (Scopus)

抄録

Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for T_C onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films T_C onset = 6.3 K and T_C zero = 3.2 K were significantly suppressed.

本文言語	English
ページ（範囲）	911-914
ページ数	4
ジャーナル	Diamond and Related Materials
巻	16
号	4-7 SPEC. ISS.
DOI	https://doi.org/10.1016/j.diamond.2007.01.027
出版ステータス	Published - 2007 4月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
化学 (全般)
機械工学
材料化学
電子工学および電気工学

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10.1016/j.diamond.2007.01.027

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@article{bd6ccbb3044742d1b3e67bd9d438baae,

title = "Superconducting properties of homoepitaxial CVD diamond",

abstract = "Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.",

keywords = "Boron, Diamond, MIT, Superconductivity",

author = "Y. Takano and T. Takenouchi and S. Ishii and S. Ueda and T. Okutsu and I. Sakaguchi and H. Umezawa and H. Kawarada and M. Tachiki",

year = "2007",

month = apr,

doi = "10.1016/j.diamond.2007.01.027",

language = "English",

volume = "16",

pages = "911--914",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "4-7 SPEC. ISS.",

}

TY - JOUR

T1 - Superconducting properties of homoepitaxial CVD diamond

AU - Takano, Y.

AU - Takenouchi, T.

AU - Ishii, S.

AU - Ueda, S.

AU - Okutsu, T.

AU - Sakaguchi, I.

AU - Umezawa, H.

AU - Kawarada, H.

AU - Tachiki, M.

PY - 2007/4

Y1 - 2007/4

N2 - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

AB - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

KW - Boron

KW - Diamond

KW - MIT

KW - Superconductivity

UR - http://www.scopus.com/inward/record.url?scp=34047256071&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047256071&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2007.01.027

DO - 10.1016/j.diamond.2007.01.027

M3 - Article

AN - SCOPUS:34047256071

SN - 0925-9635

VL - 16

SP - 911

EP - 914

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-7 SPEC. ISS.

ER -

Superconducting properties of homoepitaxial CVD diamond

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