TY - JOUR
T1 - Superconductivity in polycrystalline diamond thin films
AU - Takano, Yoshihiko
AU - Nagao, Masanori
AU - Takenouchi, Tomohiro
AU - Umezawa, Hitoshi
AU - Sakaguchi, Isao
AU - Tachiki, Masashi
AU - Kawarada, Hiroshi
N1 - Funding Information:
This study was partially supported by Grants-in-Aid from the Japan Society for the Promotion of Science, Ishikawa-Carbon Science and Technology Foundation and Iketani Science and Technology Foundation.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/11
Y1 - 2005/11
N2 - Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7 K for Tc onset and 5.0 K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7 T.
AB - Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7 K for Tc onset and 5.0 K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7 T.
KW - (111) Orientation
KW - Boron-doped diamond
KW - Metal-insulator transition
KW - Semiconductivity
KW - Superconductivity
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U2 - 10.1016/j.diamond.2005.08.014
DO - 10.1016/j.diamond.2005.08.014
M3 - Conference article
AN - SCOPUS:27744594440
SN - 0925-9635
VL - 14
SP - 1936
EP - 1938
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 11-12
T2 - Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue
Y2 - 11 May 2005 through 14 May 2005
ER -