抄録
The crystal structure of InN is wurtzite and its interplanar spacing of (101̄1) is almost the same as that of tetragonal In(101). The crystallographic similarity produces many problems to solve about the electronic properties of semiconducting InN. Above all, there is a controversy over the possibility that In layers in InN that contains poly-crystalline phase couple by tunneling and exhibit no substantial depression of their superconducting transition temperature from the bulk In value. Here we present a superconductor to insulator transition in highly disordered InN with grains having a (101̄1) plane parallel to sapphire (0001).
本文言語 | English |
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ページ(範囲) | 80-84 |
ページ数 | 5 |
ジャーナル | Physica Status Solidi (A) Applications and Materials Science |
巻 | 203 |
号 | 1 |
DOI | |
出版ステータス | Published - 2006 1月 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子材料、光学材料、および磁性材料