TY - JOUR
T1 - Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition
AU - Kawano, Akihiro
AU - Ishiwata, Hitoshi
AU - Iriyama, Shingo
AU - Okada, Ryosuke
AU - Yamaguchi, Takahide
AU - Takano, Yoshihiko
AU - Kawarada, Hiroshi
PY - 2010/8/16
Y1 - 2010/8/16
N2 - The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.
AB - The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.
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U2 - 10.1103/PhysRevB.82.085318
DO - 10.1103/PhysRevB.82.085318
M3 - Article
AN - SCOPUS:77957598622
SN - 1098-0121
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
M1 - 085318
ER -