TY - GEN
T1 - Suppression of CU2ZnSnS4 Nanoparticle Based Film's Decomposition during the Selenization
AU - Moriuchi, K.
AU - Taki, S.
AU - Uruno, A.
AU - Kobayashi, M.
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to acknowledge Mitsui Mining and Smelting Co. This work was supported in part by Waseda University Research Initiatives and Waseda University Grant for Special Research Project. Authors thank to the contribution of K. Ishigami.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - Cu2ZnSnS4(CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU2ZnSn(S,Se)4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.
AB - Cu2ZnSnS4(CZTS) nanoparticles were prepared by the ball milling method, and CZTS layers were annealed under the Se vapor (selenization) to form CU2ZnSn(S,Se)4 (CZTSSe) thin films. It was confirmed that the desorption of elements from the layer was occurred during the selenization. The suppression of the by-product formation was attempted by Se + Sn vapor or Se + S vapor supply during the selenization. In case of Se + Sn vapor supply, it was confirmed that the annealing temperature and the positioning of materials were import parameters. In case of Se + S vapor supply, the suppression of the by-product formation was achieved but the ratio between Se and S of CZTSSe was also affected.
UR - http://www.scopus.com/inward/record.url?scp=85062268996&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062268996&partnerID=8YFLogxK
U2 - 10.1109/NANO.2018.8626219
DO - 10.1109/NANO.2018.8626219
M3 - Conference contribution
AN - SCOPUS:85062268996
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 18th International Conference on Nanotechnology, NANO 2018
PB - IEEE Computer Society
T2 - 18th International Conference on Nanotechnology, NANO 2018
Y2 - 23 July 2018 through 26 July 2018
ER -