Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu; T. Ipposhi; T. Uchida; S. Maegawa; M. Inuishi

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu^*, T. Ipposhi, T. Uchida, S. Maegawa, M. Inuishi

^*この研究の対応する著者

研究成果: Paper › 査読

4 被引用数 (Scopus)

抄録

The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

本文言語	English
ページ	80-81
ページ数	2
出版ステータス	Published - 2000 12月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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引用スタイル

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title = "Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology",

abstract = "The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.",

author = "T. Iwamatsu and T. Ipposhi and T. Uchida and S. Maegawa and M. Inuishi",

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T1 - Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

AU - Iwamatsu, T.

AU - Ipposhi, T.

AU - Uchida, T.

AU - Maegawa, S.

AU - Inuishi, M.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

AB - The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034472345&partnerID=8YFLogxK

M3 - Paper

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ER -

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

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ASJC Scopus subject areas

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