Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)

Y. Mizuochi*, H. Nagasawa, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Surface morphology of continuous heteroepitaxial diamond layers on β-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved.

本文言語English
ページ(範囲)277-281
ページ数5
ジャーナルDiamond and Related Materials
6
2-4
DOI
出版ステータスPublished - 1997 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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