Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Nan Su*, Kaito Tsuboi, Shotaro Kobayashi, Kota Sugimoto, Masakazu Kobayashi*

*この研究の対応する著者

研究成果: Article査読

抄録

SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

本文言語English
論文番号2200555
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
220
8
DOI
出版ステータスPublished - 2023 4月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学
  • 電子工学および電気工学

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