Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.