TY - JOUR
T1 - Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method
AU - Yoshikawa, Akihiko
AU - Kobayashi, Masakazu
AU - Tokita, Shigeru
N1 - Funding Information:
This work was supportedi n part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan, and was also supportedi n part by the Hoso-Bunka Foundation.
PY - 1994/12/2
Y1 - 1994/12/2
N2 - The surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe using DMZn, DMCd and H2Se as reactants has been studied with a newly developed optical in-situ monitoring method named surface photo-interference (SPI). It is shown that there is a quite significant difference in the surface reaction mechanism between the MOMBE-ALE of ZnSe and CdSe. That is, in the ALE of ZnSe when none of the source gases are pre-cracked, the reaction to form ZnSe can take place when the group-II source (i.e., DMZn) is supplied, resulting in an alternate appearance of Zn-terminated and H2Se-terminated surfaces during growth. On the other hand, the reaction to form CdSe can take place when a group-VI source (i.e., H2Se) is supplied, resulting in an alternate appearance of Se-terminated and DMCd-terminated surfaces during growth.
AB - The surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe using DMZn, DMCd and H2Se as reactants has been studied with a newly developed optical in-situ monitoring method named surface photo-interference (SPI). It is shown that there is a quite significant difference in the surface reaction mechanism between the MOMBE-ALE of ZnSe and CdSe. That is, in the ALE of ZnSe when none of the source gases are pre-cracked, the reaction to form ZnSe can take place when the group-II source (i.e., DMZn) is supplied, resulting in an alternate appearance of Zn-terminated and H2Se-terminated surfaces during growth. On the other hand, the reaction to form CdSe can take place when a group-VI source (i.e., H2Se) is supplied, resulting in an alternate appearance of Se-terminated and DMCd-terminated surfaces during growth.
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U2 - 10.1016/0169-4332(94)90234-8
DO - 10.1016/0169-4332(94)90234-8
M3 - Article
AN - SCOPUS:0028762003
SN - 0169-4332
VL - 82-83
SP - 316
EP - 321
JO - Applied Surface Science
JF - Applied Surface Science
IS - C
ER -