Synthesis of poly(oxoammonium salt)s and their electrical properties in the organic thin film device

Takeo Suga; Shunya Takeuchi; Takanori Ozaki; Miki Sakata; Kenichi Oyaizu; Hiroyuki Nishide

doi:10.1246/cl.2009.1160

Synthesis of poly(oxoammonium salt)s and their electrical properties in the organic thin film device

Takeo Suga, Shunya Takeuchi, Takanori Ozaki, Miki Sakata, Kenichi Oyaizu, Hiroyuki Nishide^*

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

24 被引用数 (Scopus)

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Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical cone, of 643% exhibited a resistive switching behavior (ON-OFF ratio >10³), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I-V characteristics.

本文言語	English
ページ（範囲）	1160-1161
ページ数	2
ジャーナル	Chemistry Letters
巻	38
号	12
DOI	https://doi.org/10.1246/cl.2009.1160
出版ステータス	Published - 2009

ASJC Scopus subject areas

化学 (全般)

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10.1246/cl.2009.1160

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abstract = "Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical cone, of 643% exhibited a resistive switching behavior (ON-OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I-V characteristics.",

author = "Takeo Suga and Shunya Takeuchi and Takanori Ozaki and Miki Sakata and Kenichi Oyaizu and Hiroyuki Nishide",

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AU - Suga, Takeo

AU - Takeuchi, Shunya

AU - Ozaki, Takanori

AU - Sakata, Miki

AU - Oyaizu, Kenichi

AU - Nishide, Hiroyuki

PY - 2009

Y1 - 2009

N2 - Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical cone, of 643% exhibited a resistive switching behavior (ON-OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I-V characteristics.

AB - Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical cone, of 643% exhibited a resistive switching behavior (ON-OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I-V characteristics.

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Synthesis of poly(oxoammonium salt)s and their electrical properties in the organic thin film device

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