@inproceedings{cca0ca574e5746fa9eeb63c2c59a72d6,
title = "Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors",
abstract = "In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.",
keywords = "Current measurement, Diodes, Doping, Electron beams, Gallium nitride, Heterojunction bipolar transistors, P-n junctions, Plasma temperature, Scanning electron microscopy, Substrates",
author = "K. Kumakura and T. Makimoto and N. Kobayashi and T. Hashizume and T. Fukui and H. Hasegawa",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239900",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "49--50",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
}