抄録
There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0:1 THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modeling techniques. Low-power high-speed wireless data transfer at 11 Gb/s and 19 pJ/bit and a 7-pJ/bit ultra-low-power transceiver chipset are presented.
本文言語 | English |
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ページ(範囲) | 1091-1104 |
ページ数 | 14 |
ジャーナル | IEICE Transactions on Electronics |
巻 | E98C |
号 | 12 |
DOI | |
出版ステータス | Published - 2015 12月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学