Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.
|出版ステータス||Published - 2002 11月 1|
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