Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

H. Tanaka; M. Horita; Yuichi Matsushima; Y. Takahashi

Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

H. Tanaka^*, M. Horita, Yuichi Matsushima, Y. Takahashi

^*この研究の対応する著者

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔE_g at 20°C has been estimated to be 48-55 meV. At ΔE_g of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔE_g. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

本文言語	English
ページ（範囲）	605-612
ページ数	8
ジャーナル	Optical and Quantum Electronics
巻	28
号	5
出版ステータス	Published - 1996
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学
原子分子物理学および光学

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title = "Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module",

abstract = "We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.",

author = "H. Tanaka and M. Horita and Yuichi Matsushima and Y. Takahashi",

year = "1996",

language = "English",

volume = "28",

pages = "605--612",

journal = "Optical and Quantum Electronics",

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T1 - Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

AU - Tanaka, H.

AU - Horita, M.

AU - Matsushima, Yuichi

AU - Takahashi, Y.

PY - 1996

Y1 - 1996

N2 - We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

AB - We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

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M3 - Article

AN - SCOPUS:0030149625

SN - 0306-8919

VL - 28

SP - 605

EP - 612

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 5

ER -

Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

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ASJC Scopus subject areas

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