TY - GEN
T1 - Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures
AU - Sugiyama, Yoshihiro
AU - Tackeuchi, Atsushi
AU - Inata, Tsuguo
AU - Muto, Sunichi
PY - 1991/12/1
Y1 - 1991/12/1
N2 - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.
AB - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.
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M3 - Conference contribution
AN - SCOPUS:0026374423
SN - 0854984100
T3 - Institute of Physics Conference Series
SP - 235
EP - 238
BT - Institute of Physics Conference Series
PB - Publ by IOP Publishing Ltd
T2 - Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
Y2 - 9 September 1991 through 12 September 1991
ER -