Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama; Atsushi Tackeuchi; Tsuguo Inata; Sunichi Muto

doi:10.1143/JJAP.30.L1454

Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama, Atsushi Tackeuchi, Tsuguo Inata, Sunichi Muto

研究成果: Article › 査読

10 被引用数 (Scopus)

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We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an Al_xGa_1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

本文言語	English
ページ（範囲）	L1454-L1457
ジャーナル	Japanese journal of applied physics
巻	30
号	8
DOI	https://doi.org/10.1143/JJAP.30.L1454
出版ステータス	Published - 1991 8月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.30.L1454

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@article{819c469f2382461fa8e10c534bbc2841,

title = "Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures",

abstract = "We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.",

keywords = "Exciton, Pump-probe, Quantum well, Temperature dependence, Time-resolved photoluminescence, Tunnel",

author = "Yoshihiro Sugiyama and Atsushi Tackeuchi and Tsuguo Inata and Sunichi Muto",

year = "1991",

month = aug,

doi = "10.1143/JJAP.30.L1454",

language = "English",

volume = "30",

pages = "L1454--L1457",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

AU - Sugiyama, Yoshihiro

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Muto, Sunichi

PY - 1991/8

Y1 - 1991/8

N2 - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

AB - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

KW - Exciton

KW - Pump-probe

KW - Quantum well

KW - Temperature dependence

KW - Time-resolved photoluminescence

KW - Tunnel

UR - http://www.scopus.com/inward/record.url?scp=0026207057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026207057&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.L1454

DO - 10.1143/JJAP.30.L1454

M3 - Article

AN - SCOPUS:0026207057

SN - 0021-4922

VL - 30

SP - L1454-L1457

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 8

ER -

Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

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