TY - JOUR
T1 - The 1200 nm-Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
AU - Hiraishi, Yu
AU - Shirai, Tomohiro
AU - Kwoen, Jinkwan
AU - Ito, Taisei
AU - Matsushima, Yuichi
AU - Ishikawa, Hiroshi
AU - Arakawa, Yasuhiko
AU - Utaka, Katsuyuki
N1 - Funding Information:
This article is based on the results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO).
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/5/1
Y1 - 2020/5/1
N2 - In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm-band InAs/InAlGaAs QD is applied to 1200 nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP-RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP-RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross-sectional image analyses by scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
AB - In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm-band InAs/InAlGaAs QD is applied to 1200 nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP-RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP-RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross-sectional image analyses by scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
KW - InAs/GaAs quantum dots
KW - intermixing
KW - ion implantation
KW - rapid thermal annealing
KW - reactive ion etching
UR - http://www.scopus.com/inward/record.url?scp=85083701115&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85083701115&partnerID=8YFLogxK
U2 - 10.1002/pssa.201900851
DO - 10.1002/pssa.201900851
M3 - Article
AN - SCOPUS:85083701115
SN - 1862-6300
VL - 217
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 10
M1 - 1900851
ER -