In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm-band InAs/InAlGaAs QD is applied to 1200 nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP-RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP-RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross-sectional image analyses by scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
|ジャーナル||Physica Status Solidi (A) Applications and Materials Science|
|出版ステータス||Published - 2020 5月 1|
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