The Impact of High Pressure Dry O2 Oxidation on Sub-Quarter Micron Planarized LOCOS

T. Yamashita; T. Kuroi; T. Uchida; S. Komori; K. Kobayashi; M. Inuishi; H. Miyoshi

doi:10.1109/iedm.1996.554105

The Impact of High Pressure Dry O₂ Oxidation on Sub-Quarter Micron Planarized LOCOS

T. Yamashita, T. Kuroi, T. Uchida, S. Komori, K. Kobayashi, M. Inuishi, H. Miyoshi

研究成果: Conference article › 査読

1 被引用数 (Scopus)

抄録

Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O₂ oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

本文言語	English
ページ（範囲）	821-824
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/iedm.1996.554105
出版ステータス	Published - 1996
外部発表	はい
イベント	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1996 12月 8 → 1996 12月 11

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
材料化学
電子工学および電気工学

文献へのアクセス

10.1109/iedm.1996.554105

他のファイルとリンク

引用スタイル

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author = "T. Yamashita and T. Kuroi and T. Uchida and S. Komori and K. Kobayashi and M. Inuishi and H. Miyoshi",

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AU - Kuroi, T.

AU - Uchida, T.

AU - Komori, S.

AU - Kobayashi, K.

AU - Inuishi, M.

AU - Miyoshi, H.

PY - 1996

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AB - Recessed LOCOS isolation using high pressure dry 0 2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.

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