TY - GEN
T1 - The integration of Gaon SiC at room temperature by surface activated bonding method
AU - Xu, Yang
AU - Mu, Fengwen
AU - Wang, Yinghui
AU - Chen, Dapeng
AU - Suga, Tadatomo
PY - 2019/5/1
Y1 - 2019/5/1
N2 - The integration of Gaon SiC is a promising method to reduce the self-heating of Ga-based devices. The bonding with an average bonding energy of \sim 2.31\mathrm {J} /\mathrm {m}^{\mathbf {2}} was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate \mathrm {a}\sim 2.2 nm amorphous SiC layer and \sim 1.8 nm amorphous Galayer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by \sim 0.5 nm after annealing, which may due to the further diffusion of Ga and Si.
AB - The integration of Gaon SiC is a promising method to reduce the self-heating of Ga-based devices. The bonding with an average bonding energy of \sim 2.31\mathrm {J} /\mathrm {m}^{\mathbf {2}} was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate \mathrm {a}\sim 2.2 nm amorphous SiC layer and \sim 1.8 nm amorphous Galayer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by \sim 0.5 nm after annealing, which may due to the further diffusion of Ga and Si.
UR - http://www.scopus.com/inward/record.url?scp=85068423685&partnerID=8YFLogxK
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U2 - 10.23919/LTB-3D.2019.8735134
DO - 10.23919/LTB-3D.2019.8735134
M3 - Conference contribution
AN - SCOPUS:85068423685
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -