The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation

Aya Uruno; Masakazu Kobayashi

doi:10.1002/pssa.201800592

The Optical Property Characterization of AgGaTe₂ Prepared by the Two-Step Closed Space Sublimation

Aya Uruno^*, Masakazu Kobayashi

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

Since its bandgap is close to optimum value, AgGaTe₂ is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe₂ thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag₂Te or AgGa₅Te₈ on PL properties of AgGaTe₂ is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe₂. It is also investigated that the activation energy (E_A) of the FE emission is about 7.8 meV.

本文言語	English
論文番号	1800592
ジャーナル	Physica Status Solidi (A) Applications and Materials Science
巻	216
号	1
DOI	https://doi.org/10.1002/pssa.201800592
出版ステータス	Published - 2019 1月 9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
表面および界面
表面、皮膜および薄膜
電子工学および電気工学
材料化学

文献へのアクセス

10.1002/pssa.201800592

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引用スタイル

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title = "The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation",

abstract = "Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.",

keywords = "chalcopyrites, closed space sublimation, photoluminescence, solar cells",

author = "Aya Uruno and Masakazu Kobayashi",

note = "Funding Information: This work was supported in part by Waseda University Grant for Special Research Projects, Grant-in-Aid for Young Scientists (Early Bird) at Waseda Research Institute for Science and Engineering, and the Sasakawa Scientific Research Grant from The Japan Science Society. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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N1 - Funding Information: This work was supported in part by Waseda University Grant for Special Research Projects, Grant-in-Aid for Young Scientists (Early Bird) at Waseda Research Institute for Science and Engineering, and the Sasakawa Scientific Research Grant from The Japan Science Society. Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/1/9

Y1 - 2019/1/9

N2 - Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.

AB - Since its bandgap is close to optimum value, AgGaTe2 is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2 thin films prepared by the two-step closed space sublimation method. In particular, the effect of by-products including Ag2Te or AgGa5Te8 on PL properties of AgGaTe2 is investigated. The radiative recombination process is also explored. PL measurements of thin films are performed by changing the excitation intensity and measured temperature. It is confirmed that the emission band probably derived from defects and impurities exists near 1.02 eV and the emission band derived from free exciton (FE) exists around 1.32 eV, and the variation of FE emission intensity is affected by the Ag/Ga ratio in AgGaTe2. It is also investigated that the activation energy (EA) of the FE emission is about 7.8 meV.

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KW - photoluminescence

KW - solar cells

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