"All-wet fabrication process" for VLSI interconnects technologies was investigated as a novel Cu wiring process. Electroless NiB film for barrier layer could be deposited on the SiO 2Si substrate using a self-assembled-monolayer, SAM, and it showed adhesion a good thermal stability. Cu filling could be formed on the electroless NiB layer without conductive/adhesive layer. The electroless NiB film could also be selectively deposited onto a surface of Cu writing as a capping layer. It was demonstrated that a potential for all-wet fabrication process for ULSI interconnects technologies.
|Published - 2003
|Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
継続期間: 2003 10月 12 → 2003 10月 17
|Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
|03/10/12 → 03/10/17
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