抄録
The authors calculate the uniaxial stress dependence of the acoustic properties of heavily doped n-type Ge at low temperatures using Green function techniques. It is shown that the results are consistent with experiments of Sb-doped Ge made previously provided that Fermi levels lie in the impurity band. A brief discussion of the magnetic field dependence is also given.
| 本文言語 | English |
|---|---|
| 論文番号 | 004 |
| ページ（範囲） | 4547-4553 |
| ページ数 | 7 |
| ジャーナル | Journal of Physics: Condensed Matter |
| 巻 | 3 |
| 号 | 25 |
| DOI | |
| 出版ステータス | Published - 1991 |
ASJC Scopus subject areas
- 材料科学（全般）
- 凝縮系物理学