TY - JOUR
T1 - The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth
AU - Tepsanongsuk, Kun
AU - Noda, Suguru
AU - Tsuji, Yoshiko
AU - Komiyama, Hiroshi
PY - 2000/12/1
Y1 - 2000/12/1
N2 - The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.
AB - The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.
UR - http://www.scopus.com/inward/record.url?scp=0034461293&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034461293&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0034461293
SN - 1048-0854
SP - 409
EP - 412
JO - Advanced Metallization Conference (AMC)
JF - Advanced Metallization Conference (AMC)
T2 - Advanced Metallization Conference 2000
Y2 - 2 October 2000 through 4 October 2000
ER -