抄録
The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 398-405 |
| ページ数 | 8 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 4283 |
| DOI | |
| 出版ステータス | Published - 2001 |
| 外部発表 | はい |
| イベント | Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States 継続期間: 2001 1月 22 → 2001 1月 26 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- コンピュータ サイエンスの応用
- 応用数学
- 電子工学および電気工学