TY - GEN
T1 - Thermodynamic analysis for crystal growth of the III-V compound
AU - Yamaguchi, K.
AU - Takeda, Y.
PY - 2000/12/1
Y1 - 2000/12/1
N2 - Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures or arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and 1336K. These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by authors.
AB - Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures or arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and 1336K. These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by authors.
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M3 - Conference contribution
AN - SCOPUS:0034592650
SN - 087339495X
T3 - Proceedings of the Second International Conference on Processing Materials for Properties
SP - 209
EP - 212
BT - Proceedings of the Second International Conference on Processing Materials for Properties
A2 - Mishra, B.
A2 - Yamauchi, C,
A2 - Mishra, B.
A2 - Yamauchi, C.
T2 - Proceedings of the Second International Conference on Processing Materials for Properties
Y2 - 5 November 2000 through 8 November 2000
ER -