Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto; Kouta Takahashi; Shunsuke Oba; Takuya Terada; Masataka Ogasawara; Motohiro Tomita; Masashi Kurosawa; Takanobu Watanabe

doi:10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

本文言語	English
ホスト出版物のタイトル	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	283-285
ページ数	3
ISBN（印刷版）	9781538637111
DOI	https://doi.org/10.1109/EDTM.2018.8421517
出版ステータス	Published - 2018 7月 26
イベント	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan 継続期間: 2018 3月 13 → 2018 3月 16

出版物シリーズ

名前	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
国/地域	Japan
City	Kobe
Period	18/3/13 → 18/3/16

ASJC Scopus subject areas

電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/EDTM.2018.8421517

他のファイルとリンク

引用スタイル

Hashimoto, S., Takahashi, K., Oba, S., Terada, T., Ogasawara, M., Tomita, M., Kurosawa, M., & Watanabe, T. (2018). Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 283-285). 記事 8421517 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. / Hashimoto, Shuichiro; Takahashi, Kouta; Oba, Shunsuke その他.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 283-285 8421517 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: Conference contribution

Hashimoto, S, Takahashi, K, Oba, S, Terada, T, Ogasawara, M, Tomita, M, Kurosawa, M & Watanabe, T 2018, Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421517, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 283-285, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 18/3/13. https://doi.org/10.1109/EDTM.2018.8421517

Hashimoto S, Takahashi K, Oba S, Terada T, Ogasawara M, Tomita M その他. Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 283-285. 8421517. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421517

Hashimoto, Shuichiro ; Takahashi, Kouta ; Oba, Shunsuke その他. / Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 283-285 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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abstract = "We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.",

keywords = "Peltier cooling, SiGe, thermal conductivity",

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note = "Funding Information: This work was supported by CREST, (JPMJCR15Q7), and by PRESTO, (JPMJPR15R2). Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

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AU - Ogasawara, Masataka

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AB - We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

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BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

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Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

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