Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno; Toshihiro Kawano; Tomonobu Tsuchiya; Tsuyoshi Taniwatari

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno^*, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

^*この研究の対応する著者

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

本文言語	English
ページ	610-612
ページ数	3
出版ステータス	Published - 1992 12月 1
外部発表	はい
イベント	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8月 26 → 1992 8月 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

Link to publication in Scopus

フィンガープリント

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引用スタイル

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. / Okuno, Yae; Kawano, Toshihiro; Tsuchiya, Tomonobu その他.
1992. 610-612 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

研究成果: Paper › 査読

Okuno, Y, Kawano, T, Tsuchiya, T & Taniwatari, T 1992, 'Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs', Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26 - 92/8/28 pp. 610-612.

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abstract = "This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.",

author = "Yae Okuno and Toshihiro Kawano and Tomonobu Tsuchiya and Tsuyoshi Taniwatari",

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AU - Taniwatari, Tsuyoshi

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