TY - GEN
T1 - Three terminal solid-electrolyte nanometer switch
AU - Sakamoto, Toshitsugu
AU - Banno, Naoki
AU - Iguchi, Noriyuki
AU - Kawaura, Hisao
AU - Kaeriyama, Shunichi
AU - Mizuno, Masayuki
AU - Terabe, Kazuya
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
PY - 2005
Y1 - 2005
N2 - We propose a three-terminal solid-electrolyte nanometer switch, where the control gate is separated from the current path. This novel switch resolves the issues arising from large current during switching (>1mA) in a two-terminal solid-electrolyte switch. We demonstrate that the drain current reversibly switches when a metallic bridge electrochemically forms or dissolves between the source and drain by applying gate voltage. The ON resistance is 200-300^ and the ON/OFF current ratio is as high as 105. Each state is nonvolatile.
AB - We propose a three-terminal solid-electrolyte nanometer switch, where the control gate is separated from the current path. This novel switch resolves the issues arising from large current during switching (>1mA) in a two-terminal solid-electrolyte switch. We demonstrate that the drain current reversibly switches when a metallic bridge electrochemically forms or dissolves between the source and drain by applying gate voltage. The ON resistance is 200-300^ and the ON/OFF current ratio is as high as 105. Each state is nonvolatile.
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M3 - Conference contribution
AN - SCOPUS:33847756720
SN - 078039268X
SN - 9780780392687
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 475
EP - 478
BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
T2 - IEEE International Electron Devices Meeting, 2005 IEDM
Y2 - 5 December 2005 through 7 December 2005
ER -